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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Memory device and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,835, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory device and operating metho... Read More


US Patent Issued to Sandisk Technologies on Nov. 3 for "Die by die trimming of drain-side select gate threshold voltage to reduce cumulative read disturb" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,836, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Die by die trimming of drain-side select gate threshol... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,837, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device and operating method thereof" wa... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Nonvolatile memory devices, storage devices including the same, and methods of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,838, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Nonvolatile memory devices, storage devices in... Read More


US Patent Issued to Kioxia on Nov. 3 for "Memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,839, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Memory system" was invented by Tsukasa Tokutomi (Kamakura, Japan), Masanobu Sh... Read More


US Patent Issued to Sandisk Technologies on Nov. 3 for "Read in multi-tier non-volatile memory" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,840, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Read in multi-tier non-volatile memory" was invented b... Read More


US Patent Issued to TDK on Nov. 3 for "Power supply apparatus and memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,841, issued on Nov. 3, was assigned to TDK Corp. (Tokyo). "Power supply apparatus and memory system" was invented by Yugi Ito (Tokyo), Norik... Read More


US Patent Issued to Intel NDTM US on Nov. 3 for "Nand duty cycle correction for data input write path" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,842, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Nand duty cycle correction for data input write path" was i... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device changing clock frequency according to the number of active blocks and storage device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,843, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device changing clock frequency accordi... Read More


US Patent Issued to SK hynix on Nov. 3 for "Memory device and method of operating the same using multi-level pass voltages during a program operation" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,844, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of operating the same using multi-l... Read More